Sapphire Growth Method - Heat Exchanger Method (HEM)

Heat Exchanger Method (HEM) is one of sapphire growth method, which is used to grow the sapphire with large size. Since 1970s, Schmid and Viechnicki applied HEM to grow a big sapphire crystal, and the method is used popular and popular.

Its basic principle is to apply a heat exchanger to dissipate heat, making the crystal growth region forming a longitudinal cold hot temperature gradient. By controlling the volume of gas flow inside heat exchanger and changing the heating powder, the gradient can be kept. Then the crystal can grow slowly from the bottom to the upper part. Following is a pic to show the structure and principle of the growing method.

Tungsten crucible is used in the middle of furnace, and sapphire is growing in the crucible.

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Sapphire Growth Method - Edge-defined Film-fed Growth (EFG)

The following picture is to show the growth principle of Edge-defined Film-Fed Growth Method. First put raw material into the fluid which carried by tungsten crucible. Heating by the heating coils, and melting the raw material, then using the mold to smooth the material on the surface of the mold by applied Capillary action, so that a thin film will formed. Follow on, the sapphire seed is brought into the fluid, and connected with the thin film. And the thin film will crystallized the same structure as sapphire seed. The seed will be pulling up slowing, and growing slowing. Tungsten crucible is one of the main part in the furnace.

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Sapphire Growth Method - Czochralski Method

The Czochralski Method is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones. The process is named after Polish scientist Jan Czochralski who invented the method in 1916 while investigating the crystallization rates of metals.

Tungsten crucible is the medium for growing sapphire in this method.

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Sapphire Growth Method - Kyropoulos Method

Kyropoulos method can be shorted as KY method. This method is the first to propose to grow crystals in 1926. Later on, it is widely used in the production and research of large-size crystal halogen, hydroxide and carbonate crystals. In 1960s and 1970s, it is improved by former Soviet Union Musatov for the production of sapphire crystals. The furnace is used tungsten crucible as growing crucible.

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Tungsten Heat Shield Price on Sep. 30, 2017

Tungsten heat shield price is 360.00USD/PC on Sep. 30, 2017, EXW, Xiamen, China. This quotation is for sapphire growth furnace industry, which is not used separately. The quotation is for one piece, and we can produce and install the whole set if you can provide us your idea or drawings.

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Coil Tungsten Filament Price on Sep.30, 2017

Coil tungsten filament price is 2.80USD/PC on Sep. 30, 2017, EXW, Xiamen, China. This type of electron beam tungsten filament cost is not mainly influenced by the raw material, so the price can be kept or increased not so greatly during the raw material rapid increasing period.

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Tungsten Granule Price on Sep. 30, 2017

Tungsten granule price is 67.20USD/KG on Sep. 30, 2017, EXW, Xiamen, China. Tungsten granule is mainly used for carbon and sulfur analysis and the most widely used grain size is 20~40mesh.

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Lanthanum Tungsten Electrode Price on Sep. 30, 2017

Lanthanumtungsten electrode price is 1.600USD/PC on Sep. 30, 2017, EXW, Xiamen, China. Tungsten electrodes keeps increasing in early Sep. and going to stable status in mid, then a bit decreasing in end Sep. meanwhile, as for the coming Chinese National Holiday and Mid-autumn Festival, the tungsten market is not so active than usual.