Silicon and gallium arsenide are
conventional semiconductor materials of the first and second generations of
representatives, their development to promote the development of
microelectronics, photonics technology, in order to bring about huge changes in
people's lives based on information technology. However, due to the performance
of the material itself, the first-generation, second-generation semiconductor
materials only work at 200 ℃ below the environment,
and anti-radiation, high voltage breakdown performance and so can not meet
modern electronic technology development for high-temperature, high-power ,
high-frequency, high-pressure and anti-radiation, can the new requirements that
emits blue light. In this case, select the new electronic device material
launched the third generation of semiconductors, GaN and SiC wide bandgap
become the representative of the third generation of semiconductor material.
With the development of microelectronics, the sapphire crystal is created and widely
used for the promotion of this industry.
The main part for growing sapphire is
tungsten crucible, which can be customized.
If there is any other question referring to
tungsten crucible for sapphire growth furnace, please feel free to contact us
through the following methods.
Email: sales@chinatungsten.com
Tel.: +86 592 512 9696/ +86 5925129595
Fax: +86 5925129797
Tel.: +86 592 512 9696/ +86 5925129595
Fax: +86 5925129797
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