Sapphire Crystal Application - Integrated Circuits

Thin sapphire crystal wafers were the first successful use of an insulating substrate upon which to deposit silicon to make the integrated circuits known as silicon on sapphire or "SOS"; now other substrates can also be used for the class of circuits known more generally as silicon on insulator. Besides its excellent electrical insulating properties, sapphire has high thermal conductivity. CMOS chips on sapphire are especially useful for high-power radio-frequency (RF) applications such as those found in cellular telephones, public-safety band radios, and satellite communication systems. "SOS" also allows for the monolithic integration of both digital and analog circuitry all on one IC chip, and the construction of extremely low power circuits.

The main part for growing sapphire is tungsten crucible, which can be customized.

If there is any other question referring to tungsten crucible for sapphire growth furnace, please feel free to contact us through the following methods.

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Sapphire Growth Process

If there is any other question referring to sapphire growth process and its tungsten heating elements, please feel free to contact us through the following methods.

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Sapphire Crystal Application - Infrared Transparent Window

Sapphire crystal for infrared transparent window needs to be high qualified, and should meet the basic requirements as following:

1)High mechanical strength: infrared transparent window material should have sufficient strength, so that it can withstand the high-speed movement of the pressure load.
2) High thermal stability: can withstand the impact of aerodynamic heating and high temperature caused by the change, transmittance and refractive index by the temperature changes.
3) High chemical stability: the material is exposed to the air, so that the material should be able to prevent salt solution or etching gas corrosion, and should not be easy deliquescence
4) High optical transmittance: can efficiently transmit the ultraviolet to the infrared radiation
5) High optical properties: small optical scattering and good refractive index
6) Meet requirement of large size window

The main part for growing sapphire is tungsten crucible, which can be customized.

If there is any other question, please feel free to contact us through the following methods.

Email: sales@chinatungsten.com
Tel.: +86 592 512 9696/ +86 5925129595
Fax: +86 5925129797 

Sapphire Crystal Application - Microelectronics

Silicon and gallium arsenide are conventional semiconductor materials of the first and second generations of representatives, their development to promote the development of microelectronics, photonics technology, in order to bring about huge changes in people's lives based on information technology. However, due to the performance of the material itself, the first-generation, second-generation semiconductor materials only work at 200 ℃ below the environment, and anti-radiation, high voltage breakdown performance and so can not meet modern electronic technology development for high-temperature, high-power , high-frequency, high-pressure and anti-radiation, can the new requirements that emits blue light. In this case, select the new electronic device material launched the third generation of semiconductors, GaN and SiC wide bandgap become the representative of the third generation of semiconductor material. With the development of microelectronics, the sapphire crystal is created and widely used for the promotion of this industry.

The main part for growing sapphire is tungsten crucible, which can be customized.

If there is any other question referring to tungsten crucible for sapphire growth furnace, please feel free to contact us through the following methods.

Email: sales@chinatungsten.com
Tel.: +86 592 512 9696/ +86 5925129595
Fax: +86 5925129797 

Sapphire Crystal Application - Laser Host

Sapphire crystal is an excellent laser host materials, such as titanium-doped sapphire crystal is the world's most outstanding broadband tunable laser crystal today, its tunable wavelength range of 660 ~ 1200nm. Moulton was first reported since 1982 to achieve laser oscillation since, because of its very wide tuning range and high gain, etc., which have been widely and well studied. With sapphire optical penetration range is very wide, from near-ultraviolet to mid-infrared light wavelength 0.9nm wavelength 5.5μm have good light transmittance, and within the band of 0.25 ~ 4.5μm is still more than 80% penetration rate; making large size, high integrity sapphire single crystal has been used as the matrix material US LICO (Laser interferometer gravitational observatory) project and other large interferometric device for measuring cosmic gravity waves in the preferred spectral components. Sapphire crystal used in civilian areas has also been very widely, such as in medical equipment, environmental equipment, laser equipment, chemical equipment, high vacuum test equipment, fiber guide wire plate textile industry, bar code scanners to scan window, never wear type Rado watch Mongolia and the like.

The main part for growing sapphire is tungsten crucible, which can be customized.

If there is any other question referring to tungsten crucible for sapphire growth furnace, please feel free to contact us through the following methods.
Email: sales@chinatungsten.com
Tel.: +86 592 512 9696/ +86 5925129595 
Fax: +86 5925129797 

Sapphire Grow Method - Micro-Pulling And Shoulder Expanding at Cooled Center (SAPMAC)

Micro-pulling and shoulder expanding at cooled center is a sapphire growth method, which is also called micro-pulling rotation Kyropoulos. The is an improved method based on Kyropoulos Method and Pulling Method by Institute of Composite Structures from the Harbin Institute of Technology. It is used to grow large size crystal. Crystal growing system includes control system, vacuum system, heating body, cooling system and thermal protection systems. The following a picture, which is a schematic shoulder cold heart to put the system trace Czochralski method, SAPMAC grown single crystal, the outlook is usually pear-shaped, crystal diameter crucible can grow to more than the inner diameter of the small size of 10 ~ 30mm. The seed is processed into split shape, use seed clips at the bottom of the heat exchanger. Rotating and pulling the heat exchanger can be accomplished seed fixed, crystals, and the exchange interaction between the heat exchanger, crystal and melt.

Cold Heart put the shoulder when trace Czochralski growth of sapphire crystals, usually the entire crystal growth process can be divided into four control phases, namely seeding, put the shoulder, and other tracks, annealing and cooling phases. Seeding stage and put the shoulder is the use of adjusting heat exchanger cooling capacity, appropriate with a certain reduction in heating temperature (heating system can provide the crucible outer wall temperature) way to achieve the crystal and put the shoulder necking control. At this time the crystal growth rate and temperature gradient interface projecting large, which is conducive to the use of larger discharge shoulders, reducing the distance to put the shoulder to prevent flipping interface, while capable of dislocation within the seed crystal defects such as the original fast from Crystals spread to the crystal surface, effectively reducing defects within the crystal content. Large temperature gradient also can increase the interface crystal growth driving force, increase the stability of the interface. Until crystals grow to the desired diameter size (cold shoulder put heart trace Czochralski crystal diameter can grow from the inner wall of the crucible 1 ~ 3cm), crystals begin Equal grow into other tracks stage. With grown crystal size, heat exchanger efficiency of crystal growth decreases rapidly, so the crystal enters Once diameter growth stage, mainly by reducing the heating temperature(Crucible outer wall temperature of the heating system can provide) to achieve crystal growth.

If there is any other question refer to tungsten crucible for sapphire growth furnace, please feel free to contact us through the following methods:
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Sapphire Grow Method-Vertical Horizontal Gradient Freezing (VHGF)

Vertical horizontal Gradient freezing method is shorted to VHGF method, which is a method used for producing large quantity sapphire crystal. This technique is a vertical temperature gradient cooling system based on the law, and the use of VGF grown GaAs crystal rods, low potential density can reach high quality crystal rods. VGF is divided based on the law, the combination of the horizontal temperature gradient cooling process, this way, can long grain size (diameter and height) and long-grain shape is relatively unrestricted.



Chunks of polycrystalline, produced by horizontal synthesis, are placed in a crucible with a seed crystal of the required orientation. The crucible is then placed vertically in a furnace and a temperature gradient is moved up the length of the crystal (away from the seed).

Single crystal growth propagates from the seed crystal and, because the crystal forms in the shape of the crucible, diameter control of the ingot is relatively simple.

If there is any other question refer to tungsten crucible for sapphire growth furnace, please feel free to contact us through the following methods:
Email:sales@chinatungsten.com
Tel.:+86 592 512 9696
Fax:+86 592 512 9797