Sapphire Growth Method - Kyropoulos Method

Kyropoulos method can be shorted as KY method. This method is the first to propose to grow crystals in 1926.later on, it is widely used in the production and research of large-size crystal halogen, hydroxide and carbonate crystals. In 1960s and 1970s, it is improved by former Soviet Union Musatov for the production of sapphire crystals.

The single crystal grown by Kyropoulos method is always shaped like a pear. Its crystal diameter crucible can grow to less than the inner diameter of the small size of 10 ~ 30mm. The principle is similar to Czochralski method. Firstly, heating raw material to the melting point molten metal melt, then a single crystal of the seed (Seed Crystal, also known as seed rod) to contact the molten metal surface, began to grow on the seed crystal and solid-liquid interface and the molten metal single crystal of the same crystal structure seed, seed to a very slow speed pulled up. After then, the seed crystal will be pull up to a height and form a crystal neck, the molten metal solidification rates and stable interface seed, the seed will not pulling up, but nor make the rotation. But only the controlling of the cooling rate of the single crystal is gradually solidified from the top down, and finally solidified into a whole monocrystalline.

This method is applied tungsten crucible as vapor to grow sapphire.

If there is any other question refer to tungsten crucible for sapphire growth furnace, please feel free to contact us through the following methods:
Email:sales@chinatungsten.com
Tel.:+86 592 512 9696
Fax:+86 592 512 9797