Sapphire Crystal Growing Methods Comparison

Sapphire Crystal Growing Methods Comparison
Growing Method	Advantages	Disadvantages	Application
Kyropoulos	High quality, Large size, High yield, Low cost	Complicate operation, Low consistency, low qualified yield, Not suitable for C sapphire	Rublcon (LED sapphire base)
Czochralski	Production examination easily, Good Shape	High density, iridium gold crucible, High cost, Size restriction	HoneyWell
EFG	High quality	Complicated Equipment and technology	Kyocera
TGT	Simple equipment, easy operation, high yield, C crystal	Uniformity temperature, long period, high cost	Shanghai Institute of Optics and Fine Mechanics
VGF	Simple equipment, high yield	High density	Yunnan, China
VHGF	Crystal size and shape are not restricted	Right is kept in STC	STC
HEM	High quality, large size	High requirement on equipment, complicated techniques, high cost, sapphire easier to break	Crystal System
SAPMAC	Entire crystal, annealing same location, short circle, low cost	Easily influenced by temperature fluctuation	Northeast China

All the above methods to grow sapphire can use tungsten crucible.

More details, please contact sales@chinatungsten.com.